Hybrid modeling and analysis on the interfacial characteristics of Cu/Al interface structures in IC packaging with wire bonding

Abstract

With the development of micro/nano electronic technology and the miniaturization of IC (Integrated Circuit) packaging, the interfacial characteristics of the nanoscale interface structure in IC packaging become more and more serious on the whole performance of IC or devices. The aim of this article is to put forward a hybrid scale method to evaluate the interfacial thermal characteristics of the Cu/Al interface structure in IC packaging with Cu wires and Al pads. In this hybrid method, the EAM (Embedded Atom Method) potential is used to describe the Cu and Al atoms; the LJ (Lennard-Jones) potential is used to describe the Van der Waals force between Cu and Al atoms in MD (Molecular Dynamics) simulation at the nanoscale situation; meanwhile, the FE (Finite Element) and ISE (Interface Stress Element) are used to calculate the performance in the Micro/macroscales. It supplies a hybrid method to evaluate the interfacial properties in the IC packaging, which is helpful to design and manufacture of IC assembly.