Hybrid integration of Fabry–Pérot cavity with waveguide photodetector on silicon substrate

Abstract

This paper demonstrated a novel device which was fabricated by the integration of a Fabry–Pérot cavity with waveguide photodetectors on silicon substrate. The design of this device integrates two functions on a single semiconductor chip, which is a current trend to make the compact on-chip photonic system. Due to the introduction of waveguide photodetectors, the tradeoff between efficiency and bandwidth could be improved and these two important factors could be specified almost independently. The Fabry–Pérot cavity was grown by metal–organic chemical vapor deposition (MOCVD), which was used for wavelength selectivity. The waveguide photodetector fabricated by the wet etching technique was used for light detection. The peak wavelength of the hybrid integrated device was at 1538nm. The full-width at half-maximum was about 0.3nm, and a dark current of 3.2nA was achieved at the reverse bias of 3.0V.