Hybrid Integration of Deterministic Quantum Dot‐Based Single‐Photon Sources with CMOS‐Compatible Silicon Carbide Photonics

Abstract

AbstractThin film 4H‐silicon carbide (4H‐SiC) is emerging as a contender for realizing large‐scale optical quantum circuits due to its high CMOS technology compatibility and large optical nonlinearities. Though, challenges remain in producing wafer‐scale 4H‐SiC thin film on insulator (4H‐SiCOI) for dense integration of photonic circuits, and in efficient coupling of deterministic quantum emitters that are essential for scalable quantum photonics. Here, hybrid integration of self‐assembled InGaAs quantum dot (QD)‐based single‐photon sources (SPSs) with wafer‐scale 4H‐SiC photonic chips prepared by ion slicing technique is demonstrated. By designing a bilayer vertical coupler, generation and highly efficient routing of single‐photon emission in the hybrid quantum photonic chip are realized. Furthermore, a chip‐integrated beamsplitter operation for triggered single photons through fabricating a 1 × 2 multimode interferometer (MMI) with a symmetric power splitting ratio of 50:50 is realized. The successful demonstration of heterogeneously integrating QD‐based SPSs on 4H‐SiC photonic chip prepared by ion slicing technique constitutes an important step toward CMOS‐compatible, fast reconfigurable quantum photonic circuits with deterministic SPSs.