Abstract
Solution-processed carbon nanotubes (CNTs) have recently attracted significant attention as p-type thin-film transistor (TFT) channels due to their high carrier mobility, high uniformity, and low process temperature. However, implementing sophisticated macroelectronics with a combination of single CNT-TFTs has been challenging because it is difficult to fabricate n-type CNT-TFTs. Therefore, in combination with indium-gallium-zinc-oxide (IGZO), which has excellent electrical performance and has been commercialized as an n-type oxide TFT, we demonstrated various hybrid complementary metal-oxide semiconductor integrated circuits, such as inverters and nor and nand gates. This hybrid integration approach allows us to combine the strength of p-type CNT- and n-type IGZO-TFTs, thus offering a significant improvement for macroelectronic applications.
Highlights
High-performance flexible electronics are highly desirable for wearable, medical, healthcare, and robotics applications.1–3 Carbon nanotubes (CNTs) are promising candidates for high-performance flexible electronics due to their high carrier mobility, high current density, high mechanical flexibility/stretchability, and compatibility with printing processes.4–8 In particular, highly purified semiconducting CNTs have attracted widespread attention for manufacturing diodes, field-effect transistors (FETs), thin-film transistors (TFTs), and integrated circuit (IC) applications.9–12 In addition, TFTs with record-breaking performance have been reported using CNTs achieved from a density-gradient ultracentrifugation method, with semiconducting purity above 99%.13 CNT
We evaluated the electrical performances of devices (CNTand IGZO-TFTs) and ICs
We demonstrate the operations of the two-input NAND and NOR gates fabricated based on the CNT- and IGZO-TFTs
Summary
High-performance flexible electronics are highly desirable for wearable, medical, healthcare, and robotics applications.1–3 Carbon nanotubes (CNTs) are promising candidates for high-performance flexible electronics due to their high carrier mobility, high current density, high mechanical flexibility/stretchability, and compatibility with printing processes.4–8 In particular, highly purified semiconducting CNTs have attracted widespread attention for manufacturing diodes, field-effect transistors (FETs), thin-film transistors (TFTs), and integrated circuit (IC) applications.9–12 In addition, TFTs with record-breaking performance have been reported using CNTs achieved from a density-gradient ultracentrifugation method, with semiconducting purity above 99%.13 CNT-. We demonstrate a hybrid integration based on p-type CNT-TFTs and n-type IGZO-TFTs to achieve hybrid CMOS ICs, which are a potential candidate to replace silicon CMOS technology.
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