Abstract
A review of recent progress in hybrid integrated platforms for silicon photonics is presented. Integration of III-V semiconductors onto silicon-on-insulator substrates based on two different bonding techniques is compared, one comprising only inorganic materials, the other technique using an organic bonding agent. Issues such as bonding process and mechanism, bonding strength, uniformity, wafer surface requirement, and stress distribution are studied in detail. The application in silicon photonics to realize high-performance active and passive photonic devices on low-cost silicon wafers is discussed. Hybrid integration is believed to be a promising technology in a variety of applications of silicon photonics.
Highlights
Prior to the invention of integrated circuits, methods were developed to integrate different materials, aiming to utilize advantages from each material simultaneously
Wafer bonding has found its new application in these technology revolutions besides demonstrated examples, such as hybrid light emitting diodes, vertical-cavity surface-emitting lasers, photodetectors, optical micro-electro-mechanical systems, and sensors, etc. [4]
In this paper we review three low-temperature wafer bonding techniques that have been used to demonstrate InP-on-silicon hybrid platform and heterogeneous platform, both recently enabling highperformance photonic devices
Summary
Prior to the invention of integrated circuits, methods were developed to integrate different materials, aiming to utilize advantages from each material simultaneously. Integration of GaAs and InP, the flagship substrate materials of photonics, and silicon, the undisputed material of choice in electronics, has been well studied. O2 plasma surface treatment emerged as an attractive approach to obtain high bonding strength under a low-temperature (
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