Abstract
We report hybrid organic/inorganic complementary circuits using ink-jet-printed fluorinated 5,11-bis(triethylsilylethynyl) anthradithiophene (diF-TESADT) as the p-channel material and zinc oxide deposited by plasma enhanced atomic layer deposition (PEALD) as the n-channel material. Using a mixed solvent system, discrete ink-jet printed diF-TESADT OTFTs have field effect mobility as large as 0.4cm2/Vs. PEALD ZnO TFTs typically have field-effect mobility >15cm2/Vs. Using p-type diF-TESADT and n-type ZnO active layers in a simple, 4-mask, 1 ink jet printing step, low temperature (⩽200°C process we fabricated complimentary MOS (CMOS) inverters with maximum voltage gain of 35 and sub-pA leakage currents for both low and high input levels.
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