Abstract

An InGaAsP-InP optical switch geometry based on electrical control of waveguide-resonator coupling is demonstrated. Thermooptic tuning of a Mach-Zehnder interferometer integrated with a racetrack resonator is shown to result in switching with ON-OFF contrast up to 18.5 dB. The optical characteristics of this unique design enable a substantial reduction of the switching power, to a value of 26 mW in comparison with 40 mW for a conventional Mach-Zehnder interferometer switch. Modulation response measurements reveal a 3 dB bandwidth of 400 kHz and a rise time of 1.8 micros, comparing favorably with current state-of-the-art thermooptic switches.

Highlights

  • Planar microring and microdisk resonators have been utilized in numerous linear and non-linear optical applications in recent years

  • The resulting hybrid MachZehnder interferometer (MZI)/resonator geometry is demonstrated to tune through conditions of under, over, and critical coupling, and exhibits a maximum ON-OFF contrast ratio of 18.5 dB at critical coupling

  • A minimum switching power of 26 mW is measured for the hybrid device, while a conventional MZI fabricated for comparison is measured to require 40 mW for complete switching

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Summary

Introduction

Planar microring and microdisk resonators have been utilized in numerous linear and non-linear optical applications in recent years. The long photon storage times achieved by the high quality factor (Q) whispering-gallery modes in such resonators result in many technologically useful characteristics, including narrow-band filter response [1], highly non-linear phase response [2], and large cavity enhancement of the electric field [3] These characteristics have been used to implement a wide range of devices, including biochemical sensors [4, 5], all-optical switches [6, 7], and low-threshold silica Raman lasers [8]. We demonstrate an InGaAsP-InP semiconductor hybrid MZI/racetrack resonator switch, and achieve electrical control of waveguide-resonator coupling using thermooptic effects This device exhibits the predicted reduction in switching power compared with a conventional MZI, good ON-OFF switching contrast, and microsecond switching speed.

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Device fabrication
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