Abstract

The dimension of transistors shrinks with each new technology developed in the semiconductor industry. The extreme scaling of transistors introduces important statistical variations in their process parameters. A large digital integrated circuit consists of a very large number (in millions or billions) of transistors, and therefore the number of statistical parameters may become very large if mismatch variations are modeled. The parametric variations often cause to the circuit performance degradation. Such degradation can lead to a circuit failure that directly affects the yield of the producing company and its fame for reliable products. As a consequence, the failure probability of a circuit must be estimated accurately enough. In this paper, we consider the Importance Sampling Monte Carlo method as a reference probability estimator for estimating tail probabilities. We propose a Hybrid ISMC approach for dealing with circuits having a large number of input parameters and provide a fast estimation of the probability. In the Hybrid approach, we replace the expensive to use circuit model by its cheap surrogate for most of the simulations. The expensive circuit model is used only for getting the training sets (to fit the surrogates) and near to the failure threshold for reducing the bias introduced by the replacement.

Highlights

  • Due to the continuously increase of the number of individual components on an Integrated Circuit (IC) the probability of a bad working IC will increase dramatically, see [1, 2]

  • Our experiments show that a linear model does not work for such large circuits and it is difficult to fit a surrogate model that is accurate in the tail so that one can classify the samples that really belong to the tail region

  • We compute the probability in the estimation phase, and we need to measure the efficiency of the probability

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Summary

Introduction

Due to the continuously increase of the number of individual components on an Integrated Circuit (IC) the probability of a bad working IC will increase dramatically, see [1, 2]. This can be illustrated by the example in [2], where an IC with S “identical” components (each having a failure probability pfail) has a rather large probability of Pfail = 1 – (1 – pfail)S on break-down, even pfail is considerable small (i.e., being a rare event). The yield Y of an IC is estimated by using the failure probability pfail of its component

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