Abstract
Organic photodiodes (OPDs) for its interesting optoelectronic properties has the potential to be utilized with complementary metal-oxide-semiconductor (CMOS) circuit for imaging, automotive, and security based applications. To achieve such a hybrid device as an image sensor, it is imperative that the quality of the OPD remains high on the CMOS substrate and that it has a well-connected optoelectronic interface with the underneath readout integrated circuit (ROIC) for efficient photogeneration and signal readout. Here, we demonstrate seamless integration of a thermally deposited visible light sensitive small molecule OPD on a standard commercial CMOS substrate using optimized doped PCBM buffer layer. Under a standard power supply voltage of 3 V, this hybrid device shows an excellent photolinearity in the entire bias regime, a high pixel sensitivity of 2 V/Lux.sec, a dynamic range (DR) of 71 dB, and a low dark leakage current density of 1 nA/cm2. Moreover, the integrated OPD has a minimum bandwidth of 400 kHz. The photoresponse nonuniformity being only 1.7%, achieved under research lab conditions, strengthens the notion that this fully-CMOS compatible technology has the potential to be applied in high-performance large-scale imaging array.
Highlights
Organic photodiodes (OPDs) for its interesting optoelectronic properties has the potential to be utilized with complementary metal-oxide-semiconductor (CMOS) circuit for imaging, automotive, and security based applications
We present a detail description of design, fabrication, and full characterization of a hybrid device consisting of a visible photosensitive small molecule OPD on a standard commercial CMOS readout integrated circuit (ROIC)
A cathode buffer layer of PCBM was introduced to mitigate shunts originating from the roughness of the aluminum substrate to keep the leakage current as low as possible
Summary
Organic photodiodes (OPDs) for its interesting optoelectronic properties has the potential to be utilized with complementary metal-oxide-semiconductor (CMOS) circuit for imaging, automotive, and security based applications. To achieve such a hybrid device as an image sensor, it is imperative that the quality of the OPD remains high on the CMOS substrate and that it has a well-connected optoelectronic interface with the underneath readout integrated circuit (ROIC) for efficient photogeneration and signal readout. We demonstrate seamless integration of a thermally deposited visible light sensitive small molecule OPD on a standard commercial CMOS substrate using optimized doped PCBM buffer layer. Replacing or adding different photoactive material will be required to broaden the spectral response of the device
Sign-in/Register to view highlights & summary Sign-in/Register to access full text options 
Free) 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a call
