Abstract
Al-doped ZnO (AZO) is pursued as an alternative low-cost transparent conductive oxide (TCO) to expensive ITO. Atomic layer deposition grown AZO films showing resistivity of 5 × 10−3 Ωcm and transmittance >85% in the visible region are reported. Au-assisted GaAs nanowires are grown directly on an optimized AZO coated glass and a GaAs nanowire-polymer hybrid device on glass is demonstrated which confirms that the as-grown GaAs nanowires form a perfect ohmic contact to AZO film. The device shows that AZO can be used as transparent electrode as well as low-cost growth platform for GaAs NWs. Finally, a simple device idea is proposed to fabricate optically transparent GaAs nanowire based solar cells on low-cost glass.
Highlights
III-V semiconductor nanowires (NWs) are being actively pursued to build generation solar cells [1,2,3,4,5]
By fabricating a simple GaAs NWpolymer hybrid device on glass, we show that atomic layer deposition (ALD) grown Al-doped ZnO (AZO) is an excellent transparent conductive oxide (TCO) as well as a promising growth substrate for GaAs NWs
GaAs nanowires growth: GaAs NWs were fabricated on AZO coated glass substrates in a horizontal flow atmospheric pressure metal organic vapor phase epitaxy (MOVPE) system with trimethylgallium (TMGa) and tertiarybutylarsene (TBAs) as precursors
Summary
III-V semiconductor nanowires (NWs) are being actively pursued to build generation solar cells [1,2,3,4,5]. Unlike the conventional solar cells, no antireflection coating is needed for NW solar cells because NWs are excellent light trappers wherein NWs act as light concentrators similar to a mirror (a single NW can concentrate 15 times the sun light [3]) For this reason, a single p-n junction based on NW can even exceed the theoretical Shockley-. III-V NWs grown on Si substrate is an ideal paradigm of achieving record high efficiencies solar cells at lower costs. Another possibility the NWs offers is the growth on much cheaper substrates than Si, such as glass [9,10]. By fabricating a simple GaAs NWpolymer hybrid device on glass, we show that ALD grown AZO is an excellent TCO as well as a promising growth substrate for GaAs NWs
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