Abstract
Hexamethyldisiloxane (HMDSO) based films containing silicon monoxide (SiO) were obtained by a plasma process. The HMDSO hybrid films were prepared on the substrates by evaporating SiO during HMDSO plasma polymerization in rf discharge. SiO was evaporated by heating in rf plasma consisting of HMDSO and oxygen at a pressure of the order of 10-4 Torr. The structures of the HMDSO hybrid films thus obtained were analyzed by fourier transform infrared spectroscopy (FTIR) and X-ray photoelectron spectroscopy (XPS) spectra. The structures of the HMDSO hybrid films containing SiO were also analyzed by FTIR. The ratio of Si/C in the hybrid films formed under the HMDSO monomer gas pressure at 7×10-4 Torr were found to be about 1.5 by XPS spectra. The HMDSO hybrid films were found to be pinhole free, and exhibited the characteristics of electrical insulators.
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