Hybrid Fabrication of Highly Rectifying <inline-formula> <tex-math notation="LaTeX">$p$ </tex-math></inline-formula>-<inline-formula> <tex-math notation="LaTeX">$n$ </tex-math></inline-formula> Homojunction Based on Nanostructured TiO<sub>2</sub>

Abstract

Present report concerns fabrication of nanostructured TiO <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sub> -based p-n homojunction, by the hybrid technique involving deposition of sol-gel grown not intentionally doped p-type TiO <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sub> nanoparticle layer over the electrochemically grown aligned, n-type TiO <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sub> nanotube array. The Au/p-TiO <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sub> /n-TiO <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sub> nanotube/Ti device was found to offer the ideality factor and the cut-in voltage of ~4 and ~1.2 V, respectively, in the temperature range of 30°C-80°C. The structural advantages of TiO <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sub> nanotubes, owing to the large junction area, eventually offered attractive rectifying behavior (~10 <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">3</sup> orders) of the fabricated junction.