Abstract

Combining semiconductor optical amplifiers (SOA) on direct-bandgap III–V substrates with low-loss silicon or silicon-nitride photonic integrated circuits (PIC) has been key to chip-scale external-cavity lasers (ECL) that offer wideband tunability along with small optical linewidths. However, fabrication of such devices still relies on technologically demanding monolithic integration of heterogeneous material systems or requires costly high-precision package-level assembly, often based on active alignment, to achieve low-loss coupling between the SOA and the external feedback circuits. In this paper, we demonstrate a novel class of hybrid ECL that overcome these limitations by exploiting 3D-printed photonic wire bonds as intra-cavity coupling elements. Photonic wire bonds can be written in-situ in a fully automated process with shapes adapted to the mode-field sizes and the positions of the chips at both ends, thereby providing low-loss coupling even in presence of limited placement accuracy. In a proof-of-concept experiment, we use an InP-based reflective SOA (RSOA) along with a silicon photonic external feedback circuit and demonstrate a single-mode tuning range from 1515 to 1565 nm along with side mode suppression ratios above 40 dB and intrinsic linewidths down to 105 kHz. Our approach combines the scalability advantages of monolithic integration with the performance and flexibility of hybrid multi-chip assemblies and may thus open a path towards integrated ECL on a wide variety of integration platforms.

Highlights

  • We operate the RSOA at large injection currents and investigate its amplified spontaneous emission (ASE) without external resonator

  • We assume that the ASE in the high-current limit reliably indicates the mode field and the emission spot that the RSOA will exhibit under lasing conditions in the cavity

  • The intensity distribution of the mode field at the device facet is captured by an infra-red microscope and processed further to extract size and position of the emitted mode field

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Summary

Introduction

The mode-field size of the RSOA as well as the location of the emission spot with respect to a reference point on the RSOA chip were measured to ensure correct dimensioning and placement of the PWB on the chip facet. We operate the RSOA at large injection currents and investigate its amplified spontaneous emission (ASE) without external resonator.

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