Abstract
Gate-grade silicon nitride (SiN x ) films were deposited on Si(100) substrates using a hybrid-excitation chemical vapor deposition technique at 280°C. In the depositions, decomposition of ammonia (NH 3) gas was first accelerated using a glow discharge plasma. Then the reaction products were irradiated by 184.9 and 253.7 nm UV light with silane (SiH 4 or Si 2H 6) gas over the substrate. The effective trapped carrier density at the SiN x / Si(100) interface was reduced to below 2 × 10 10 cm −2. The films showed a high resistivity (> 1 × 10 15 Ω. cm). From these results and the gas analysis findings with respect to the reaction products, the mechanism of improvement of the tilm properties is discussed.
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