Abstract
The use of F-based (SF6/O2, CF4/O2 and CHF3/O2) electron cyclotron resonance discharges for dry etching of TiNx films deposited onto InP by low pressure (3-10 Torr), rapid thermal metalorganic chemical vapour deposition is described. Etch rates of 50-100 AA min-1 are obtained for low DC biasing (-100 V) of the sample, giving rise to anisotropic features, infinite selectivity of etching TiNx over InP, and minimal damage to the semiconductor. SF6/O2 mixtures offer the fastest etch rates, while CHF3/O2 discharges produce significant polymer deposition under high pressure (20 mTorr) or high microwave power (>200 W) etching conditions.
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