Abstract
SnO2 is a widely used electron‐transporting layer (ETL) in perovskite solar cells. Despite the high compatibility with the perovskite absorber layers, the presence of traps at the perovskite|SnO2 interface results in performance losses; hence, their modification to improve the performance and stability of perovskite solar cells (PSCs) is therefore important. Herein, the SnO2 ETL is enhanced by incorporating a bifunctional aromatic amino fluorine molecule into the SnO2 precursor solution. The fluorine molecule is found to partially substitute the Sn and alter the energy levels while the aniline group aids in regulating the nucleation/growth rate of the perovskite crystalline films. Herein, a hole transporting material‐free carbon‐based PSCs (CPSCs) is fabricated. It is found that perovskite absorber layers deposited on these modified SnO2 hybrid layers have higher optoelectronic quality, resulting in enhanced photovoltaic performance, device stability, and reduced hysteresis in CPSCs. Devices made with the modified hybrid SnO2 layers exhibit power conversion efficiencies of 15.6% significantly better than unmodified SnO2 with 13.5%. CPSCs with these modified SnO2 films also exhibit remarkable retention of 88.7% of their initial PCE for a shelf‐life period (ISOS‐D1I) exceeding 1200 h.
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