Abstract
AbstractA layer of semipolar gallium nitride was grown on Si(210) substrate by hydride vapor phase epitaxy (HVPE). As a buffer a nanocrystalline layer of 3C‐SiC was used. It has been found that anisotropic strain of the growing nitride layer changed the crystallographic orientation of its surface: with increasing layer thickness orientation of the surface changed sequentially as follows: (0001), (10‐15), (10‐14), (10‐13) and, finally, (10‐12). (© 2013 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)
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