HVPE Growth and Characterization of Thick κ-Ga2O3 layers on GaN/Sapphire Templates

Abstract

Ga2O3 layers with thickness from 10 to 86 μm were grown by halide vapor phase epitaxy (HVPE) on GaN(0001)/sapphire templates in a hot wall reactor at 570 °C, with the growth rate of about 3–4 μm h−1. The grown layers consisted of pure (001)-oriented κ-Ga2O3 polymorph with no admixture of β-Ga2O3 or α-Ga2O3 phases. The narrowest (004) X-ray rocking curves were observed for 13–20 μm thick κ-Ga2O3 layers. A further increase in thickness results in deterioration of the crystal quality which is indicated by the broadening of rocking curves. Electrical measurements of the thick layers revealed that they were n-type, with the concentration of shallow donors gradually decreasing from ∼1016 cm−3 to ∼1015 cm−3. Deep level transient spectroscopy (DLTS) measurements revealed the presence of deep traps with levels near Ec−0.3 eV, Ec−0.6 eV, Ec−0.7 eV, Ec−0.8 eV, Ec−1 eV, with the Ec−0.8 eV being predominant.