Abstract
AbstractGaN substrates with low dislocation densities were prepared by halide vapor‐phase epitaxy (HVPE) on c‐plane sapphire and by means of a post‐growth laser‐induced lift‐off or natural stress‐induced (self‐) separation process. The HVPE growth on InGaN/GaN buffer layers and subsequent self‐separation method was seen as advantageous, in comparison with the laser‐induced lift‐off one, in terms of lower cost and better crystalline quality of the GaN material obtained. (© 2010 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)
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