Abstract
Advanced Substrates consist of a thin GaN layer bonded to a carrier wafer. The layer is separated from starting material by Smart Cut™ technology. GaN on sapphire Advanced Substrates were successfully used as seeds for HVPE-GaN growth. Unintentionally doped and silicon-doped thick GaN layers were crystallized. The results were compared to HVPE-GaN grown on standard MOCVD-GaN/sapphire templates. Free-standing HVPE-GaN with high free carrier concentration was obtained. A laser diode was built on the n-type doped HVPE-GaN grown on an Advanced Substrate.
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