Abstract
Division of Materials Science and Engineering, Hanyang University, Seoul 133-791, Korea*UNIMO Photron, Seoul 137-063 Korea(Received June 10, 2014)(Revised July 7, 2014)(Accepted July 18, 2014)Abstract The hydride vapor phase epitaxy (HVPE) grown GaN samples to precisely measure the surface characteristicswas applied to a molten KOH/NaOH wet chemical etching. The etching rate by molten KOH/NaOH wet chemical etchingmethod was slower than that by conventional etching methods, such as phosphoric and sulfuric acid etching, which may bedue to the formation of insoluble coating layer. Therefore, the molten KOH/NaOH wet chemical etching is a betterefficient method for the evaluation of etch pits density. The grown GaN single crystals were characterized by using X-raydiffraction (XRD) and X-ray rocking curve (XRC). The etching characteristics and surface morphologies were studied byscanning electron microscopy (SEM). From etching results, the optimum etching condition that the etch pits were wellindependently separated in space and clearly showed their shape, was 410
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callMore From: Journal of the Korean Crystal Growth and Crystal Technology
Disclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
