Abstract

The influence of ambient humidity on the gas-sensing characteristics of metal oxide semiconductors has been one of the greatest obstacles for gas-sensing applications. In this paper, the pure WO3 and CeO2-modified WO3 nanocubes were prepared by a simple hydrothermal method, and their gas-sensing characteristics in dry and humid atmospheres were investigated. The results show that CeO2/WO3 demonstrated excellent gas-sensing properties toward H2S with high sensitivity and high selectivity at 115 °C. Noteworthy, the humidity independence of the CeO2/WO3 increased compared to the WO3. The response retentions over the whole humidity range of the CeO2/WO3-6 and CeO2/WO3-15 sensors were 70.3, and 76%, respectively, which were much higher than the WO3 sensor (17.9%). The gas-sensing mechanism of CeO2-modified WO3 is discussed based on the gas sensitivity properties. The obtained results provide a promising route to enhance the anti-humidity properties of metal oxide semiconductor gas sensors.

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