Humidity Sensor Performance Based ZnO/SnO<sub>2</sub> Nanorods Structure Using Different ZnO Seed Layer

Abstract

This paper investigates performance of ZnO/SnO2 nanorods structure thin film deposited at two different ZnO seed layer (ZnO seed A and ZnO seed B) for humidity sensor application. ZnO seed A and ZnO seed B were deposited using two different method which were sputtering method and spin coating method respectively. ZnO/SnO2 nanorods structure thin film that has been prepared on ZnO seed A and ZnO seed B using thermal chemical vapor deposition (CVD). The structural properties have been characterized using field emission scanning electron microscopy (FESEM) (JEOL JSM 6701F). Base on the FESEM image the size of ZnO seed A and ZnO seed B were ranging around 75 to 85 nm and 17 to 21 nm respectively. The results analyzed were for ZnO/SnO2 composite nanorods structure size on ZnO seed A and ZnO seed B were averagely around 18 nm to 29 nm. The sensor properties were characterized by using current-voltage (I-V) measurement (Keithley 2400). ZnO/SnO2 nanorods structure thin film deposited on ZnO Seed A performed highest sensitivity with 265 ratio compare to ZnO/SnO2 nanorods structure thin film deposited on ZnO Seed B with 75 ratio of sensitivity.