Abstract
This paper reports on the electrical properties of polycrystalline boron nitride (BN) films deposited on silicon substrates in a B 2H 6NH 3H 2 system. Virgin (unformed) samples exhibit humidity-sensitive electrical resistances. A current obeying Ohm's law at low humidities and low fields becomes space-charge-limited at high humidities and high fields. Some of the properties fundamental to their use as humidity sensors are also examined. After electroforming, BN films in the form of Ag/BN/Si/Al sandwiches begin to exhibit threshold switching only in atmospheres containing moisture. This switching behavior depends not only on the humidity but also on the sweep speed, the frequency of oscillation and the polarity of the applied sawtooth voltage pulse trains. A revised form Dearnaley's filamentary model is proposed.
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