Abstract
Optical spectroscopy is performed for $c$-plane homoepitaxial aluminum nitride (AlN) films. The temperature dependence of the polarization-resolved photoluminescence spectra reveals the exciton fine structure. The experimental results demonstrate that the electron-hole exchange interaction energy ($j$) in AlN is $j=6.8\phantom{\rule{4pt}{0ex}}\text{meV}$, which is the largest value for typical III-V and II-VI compound semiconductors. We propose the effective interatomic distance as the criterion of the electron-hole exchange interaction energy, revealing a universal rule. This study should encourage potential applications of excitonic optoelectronic devices in nitride semiconductors similar to those using II-VI compound semiconductors.
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