Abstract
Perovskite photovoltaics are attractive energy conversion device due to > 20% power conversion efficiencies. However, these perovskite semiconductors are highly susceptible to environmental factors such as H2O and O2. To address the device stability, various experimental and simulation investigation on both materials and device level studies were carried out. With the continuous studies and understanding single junction perovskite photovoltaics efficiency crossed 23%. Retaining the fresh device efficiency is the challenging due to afore mentioned reasons. However, to address the stability various strategies were adopted. In this work, various stable and highly interacting HTLs with CsPbI3 were configured in the perovskite photovoltaics to study the output efficiencies. The photovoltaic efficiency of the well configured CsPbI3 device is around ∼ 20% however the hybrid perovskite photovoltaics efficiency is around ∼25%. To obtain the high possible efficiency various device parameters such as semiconductor thickness (t), conduction band position, valence band position, Eg, defect density, Rs, Rsh, device temperature was studied in addition to novel HTLs. Simulation result infer that CuSbS2 shows equivalent/slightly higher PV efficiency (20.56%) as compared with spiroOMeTAD HTL PV. The experimental efficiency and the corresponding device stability will be carried out in the continuation of this work.
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