Abstract
The low residual doping of HTCVD grown semi-insulating SiC crystals enables the use of decreased concentrations of compensating deep levels, thereby providing new material solutions for microwave devices. Depending on the growth conditions, high resistivity crystals with either a dominating Si-vacancy absorption or with an EPR signature of intrinsic defects such as the C-vacancy and the Si-antisite are obtained. The electrical properties of substrates with resistivities above 10(11) Omega-cm are shown to be stable upon annealing during SiC epitaxy conditions. Micropipe closing at the initial growth stage enables the demonstration of low defect density off- and on-axis 2 2-inch semi-insulating 4H SiC substrates with micropipe densities down to 1.2 cm(-2).
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
