H-Shaped Stacked UWB Dielectric Resonator Antenna With Dual Band-Notched Characteristics for WLAN/ITU Bands

Abstract

In this article, a novel H-shaped stacked ultra wideband (UWB) Dielectric Resonator Antenna (DRA) With Dual Band-Notched Characteristics for WLAN/ITU Bands is presented and studied. The proposed DRA structure consists of H-shaped stacked dielectric resonator fed by a beveled patch, adhered to the back side surface of the stacked resonators and connected to the microstrip line, partial ground plane. To realize dual band-notched characteristics of WLAN (5.1–5.9 GHz) and ITU8.0 (8.025–8.4 GHz), a C-shaped slot is embedding on the beveled patch and U-shaped band stop filter is placed near the microstrip line. A comprehensive parametric study is carried out using HFSS software to achieve the optimum antenna performance and optimize the bandwidth of the proposed antenna. From the simulation results, it is found that the proposed antenna structure operates over a frequency range of 3.59 GHz to 12.23 GHz with a fractional bandwidth of 109.23%, with two band rejections in the frequency bands of 5.20–5.68 GHz and 8.10–8.43 GHz, which Indicating that the antenna is a good candidate for UWB applications, and having better gain and radiation characteristics. The center frequencies and bandwidths of the two notched bands can be adjusted by altering the parameters of the two slots.