Abstract
ZnS nanowires films on Si (100) substrate have been obtained, using PbS as dopant, via thermal evaporation technique. High resolution transmission electron microscopy (HRTEM) images have confirmed the formation of ZnS nanowires. Energy dispersive X-ray analysis (EDX) has been employed to investigate the element’s contents (mapping and area analysis) and it has confirmed that the ZnS films were stoichiometry. Thickness and morphology of the films were explored from cross section of the films and surface, respectively, using scanning electron microscopy (SEM) and atomic force microscopy (AFM) images. These images confirmed the creation of ZnS nanostructures morphology. The diameter of the obtained nanowires is about 50 nm and their length is several micrometer. Fourier-transform infrared spectroscopy (FTIR), X-Ray Diffraction (XRD), and Photoluminance (PL) have confirmed the hexagonal phase with nanowires structure. UV-Vis characterization has been used to obtain the transparency and the band gap of ZnS films deposited on glass substrate. Also, these verified characterizations allowed to potential optical application in optoelectronic field
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