Abstract
Epitaxial Si 1− x Ge x (0≤ x≤1) multilayers, grown on Si(001) at 350 °C using a hot-wire assisted gas source molecular beam epitaxy, were observed by HRTEM. Two sample preparation techniques are compared: Ar + ion milling and tripod thinning. It is shown that the first one gives rise to an important crystalline reorganization whereas the second one provides a large cross-section suitable for HRTEM investigations. We focused our studies on two kinds of interfaces: Ge–Si and Si–Ge. It appears that the Si layer supports the main relaxation, resulting in a high density of stacking faults which allows the growth of a clean Ge upperlayer.
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