Abstract
AbstractNitrogen and also sequential nitrogen/oxygen implantations at an energy of 330 keV result in the formation of α-Si3N4 precipitates below the buried layer. A particular orientation relation between the α-Si3N4 and the Si lattice was established: the basal (00.1) α-Si3N4 plane is parallel to one of the Si {111} planes. Planar defects with (00.1) habit planes have been identified by HREM as stacking faults with a displacement vector of 1/3<10.0>.
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