Abstract
The epilayer GaAs grown by VPE on Si (111) substrate has been observed by high resolution transmission electron microscopy. Cross-section HREM images show that there are high densities of stacking faults and microtwins in the epilayer GaAs. The type of stacking faults can be distinguished with HREM imaging. The tripling in the period of superstructure along [111̄] was observed for the first time.
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