Abstract
Secondary electron emission (SEE) coefficient correlation with (100) synthetic HPHT-grown single crystal diamonds type IIa and type IIb growth sectors was investigated. SEE coefficient quantitative measurements were carried out for various growth sectors: the highest magnitudes were revealed for (100), (311) and {110} growth sectors, but {111} growth sectors have SEE coefficient 4‒6 times lower in comparison with mentioned above for both investigated crystal types. The SEE coefficient dependence of primary beam energy is non-standard for all growth sectors: SEE coefficient goes up with primary beam energy increasing. These results are very important for diamond microelectronics as various growth sectors utilization considerably changes output characteristics.
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