Abstract
A method to distinguish between two symmetrically equivalent opposite (11{\overline 2}0) and ({\overline 1}{\overline 1}20) faces of an a-plane sapphire wafer is described. It is shown that use of conventional X-ray diffraction analysis makes it possible to determine the `sign' of the sapphire a face in contrast to the `sign' of the c, m or r faces. Correct determination of the a-plane wafer orientation is important for further growth and processing of heteroepitaxial structures.
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