Abstract
Luminance, efficiency, threshold voltage, and voltage polarity dependence of the light emission have been investigated as a function of the ZnS:Mn layer thickness in ac thin-film electroluminescent (TFEL) devices grown by Atomic Layer Epitaxy (ALE). The crystallinity of the ZnS:Mn layer was studied by X-ray diffraction. The layer of poor crystallinity is about 35 nm and coincides with the dead layer observed in luminance. Luminance is nearly proportional to the ZnS:Mn layer thickness and might indicate a homogeneous excitation throughout the layer at high voltages.
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