Abstract
AbstractDespite the efficiencies above 20% achieved with (Ag,Cu)(In,Ga)Se2 (ACIGS) solar cells, further efficiency improvements are necessary. One possibility is the implementation of a postdeposition treatment (PDT) process. The aim of this study is therefore to investigate the effect of rubidium‐fluoride (RbF)‐PDT on the performance and physical properties of the ACIGS absorber. For this purpose, the RbF source temperature of the PDT process of ACIGS films with Ag/(Ag+Cu) (AAC) ratios of 5% from a multistage co‐evaporation inline process was systematically varied. It was shown that the efficiency of the devices is reduced by the PDT process, unlike observed for Cu(In,Ga)Se2 (CIGS) absorber, and is strongly influenced by the amount of rubidium. The behavior can be attributed to a strong reduction of the doping, which results from a changed doping mechanism. Furthermore, evidence for the formation of an additional layer was found. In addition, deep level transient spectroscopy (DLTS) measurements were performed on the samples showing a strong signal at low temperatures. This minority trap signal is strongly influenced by the amount of Rb and shows a systematically changing energetic position towards the middle of the band gap and an increasing density. Based on pulse variation measurements, the associated defect could be identified as an extended defect, indicating a location of the defect at grain boundaries.
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