Abstract
A fundamental analysis of the impact of Ge on the synthesis of Cu2ZnSnSe4:Ge by a sequential process is presented, reporting the consequences on the absorber morphology and solar cell devices performance.
Highlights
Kesterite thin film photovoltaics (PV) based on Cu2ZnSn(S,Se)[4] (CZTSSe) absorbers offer the same advantages as other large scale thin film production technologies such as CdTe or Cu(In,Ga)Se2 (CIGSe), being potentially capable of high throughput at large scale and enabling stable module performance, monolithic integration, aesthetic design and allowing the manufacturer to choose a suitable substrate
We investigate in depth the mechanisms underlying the Ge boost on kesterite solar cells and suggest an alternative mechanism based on the reaction scheme during selenization
The phases formed during the different steps of the reactive thermal annealing under selenium atmosphere will be compared for samples with and without Ge
Summary
Kesterite thin film photovoltaics (PV) based on Cu2ZnSn(S,Se)[4] (CZTSSe) absorbers offer the same advantages as other large scale thin film production technologies such as CdTe or Cu(In,Ga)Se2 (CIGSe), being potentially capable of high throughput at large scale and enabling stable module performance, monolithic integration, aesthetic design and allowing the manufacturer to choose a suitable substrate (e.g. glass, flexible metal or polyimide foils). While for high efficiency CIGS and CdTe voltage losses of o0.4 V can be achieved, the best kesterite devices exhibit voltage losses of around 550–600 mV.[5] Different origins for these voltage losses in kesterite solar cells have been proposed and are currently under discussion, among others strong potential fluctuations, band tailing, Cu/Zn disorder effects, interface recombination and/or the influence of secondary phases and compositional inhomogeneities.[6,7,8]
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