Abstract
Monolayer tungsten disulfide is a very promising two-dimensional material for future transistor technology. Monolayer tungsten disulfide, owing to the unique electronic properties of its atomically thin two-dimensional layered structure, can be made into a high-performance transistor device. In this paper, we focus on band-structure and carrier mobility calculations for monolayer tungsten disulfide. We use the tight-binding (TB) method and modified effective mass approximation (MEMA) to calculate the band-structure, density of states, velocity square, and other physical quantities of monolayer tungsten disulfide. Electron mobility using the Kubo–Greenwood formula is calculated based on the TB and MEMA band model, respectively. The phonon-limited electron mobility of monolayer can be reached to ∼700 cm2/Vs. Our results help to design the future nanoelectronic devices with monolayer WS2.
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