Abstract
Ge -doped ( Cu 0.5 Tl 0.5) Ba 2 Ca 3( Cu 4-y Ge y) O 12-δ (y = 0, 0.3, 0.6 and 0.9) superconductors have been synthesized at normal pressure through solid state reaction method. Ge has been doped in the CuO 2 planes constituting the superconducting block of these structures. In the as-prepared samples, a suppression of the critical temperature is observed with increased Ge concentration. The suppression of the critical temperature can be attributed to the decreased number of carriers due to their localization at Ge 4+ ions. Ge -doped post-annealed samples have shown enhancement in the critical temperature as well as magnitude of diamagnetism. Oxygen annealing seems to have replenished the charge carries through the process of hole doping in CuO 2/ GeO 2 planes, thereby bringing the carrier density closer to the optimum level. Oxygen related phonon modes have also been investigated. A shift in peak positions of the apical and planar oxygen related modes have been observed while modes associated with O δ oxygen atoms seem stable in both cases of Ge doping and oxygen annealing.
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