Abstract
A study of the mechanism of oxidating and reducting gas response on the metal oxide semiconductor (MOS) thin film surface has been done. To formulate the effect of reducting and oxidating gas adsorption to MOS’s charge carrier concentration, we use the quasi‐chemical equations as the analysis tool representing the mechanism of reaction between the point defect of MOS’s surface and the gas on thermodynamic equilibrium. The choice of the point defect system that is the natural state of the surface and bulk of the metal crystalline semiconductor is to relate description between the effect of the gas response mechanism and MOS’s electrical parameter. At a point purpose, the Flockhardt’s point defect model of MOS’s surface is used as a basis understanding of surface reaction considered within the point defect theoretical frame. Furthermore, we introduce the quasi‐chemical equation of the reaction between the point defects of the metal oxide surface and oxidating gas (O2 and CO2), and also the reducting gas (C2...
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