Abstract
Bottom-gate amorphous silicon thin-film transistors were fabricated using active layers deposited by r.f. and hot-wire (HW) chemical vapor deposition on polyethylene terephthalate (PET) and polyimide (PI) substrates. The maximum processing temperature was 100 °C for PET and 250 °C for PI. For transistors deposited at 100 °C by r.f. on PET and at 175 °C by HW on PI the transistor characteristics are comparable, although still inferior, to those of standard amorphous silicon transistors fabricated on glass substrates at 250 °C. HW transistors fabricated at 100 °C showed poor device characteristics. For devices fabricated at 100 °C, an extended anneal at this temperature was required to improve the transistor characteristics, independently of the film deposition technique used.
Published Version
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