Abstract
From the viewpoint of a systematic designing method for a chemical vapor deposition (CVD) reactor, double-wafer hot-wall and single-wafer cold-wall environments for silicon epitaxial film growth are studied, for the first time, by means of numerical calculations using the transport and epitaxy model which is effective for the SiHCl 3–H 2 system at atmospheric pressure. The distribution of the silicon epitaxial film growth rate and the profile of the silicon epitaxial film thickness are discussed in relation to the temperature and the gas velocity in the gas phase. The difference in the distribution of the epitaxial growth rate between the two types of reactors is discussed based on the transport phenomena of SiHCl 3 gas in the gas phase. Furthermore, in order to design future operations, the effect of the rotation direction of each substrate on the distribution of the silicon epitaxial growth rate is additionally discussed using the horizontal double-wafer hot-wall reactor.
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