Abstract
Microwave noise temperature is measured as a function of supplied electric power in 100 nm thick silicon on insulator layers. At 293 K, the estimated hot-hole energy-relaxation time decreases from ∼9 ps at power below 0.05 nW/hole down to ∼1.55 ps in the power range (2–10) nW/hole. The results are interpreted in terms of hot-hole interaction with longitudinal optical (LO) phonons. A comparison of the experimental data with those calculated in the hot-hole-temperature approximation indicates accumulation of non-equilibrium optical phonons (termed hot phonons). In the power range of the dominant hole–LO phonon interaction, the increase in equivalent hot-phonon temperature is proportional to the increase in hot-hole temperature. The estimated value for the hot-phonon lifetime, (1.75 ± 0.4) ps, is comparable with the hot-hole energy-relaxation time at the high bias, ∼1.55 ps.
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