Abstract

Degradation induced by hot-carrier stress (HCS) in a Multi-STI-Finger (MF) LDMOS is analyzed through both electrical measurements and TCAD simulations. The critical HCS issues have been first addressed on a conventional STI-based LDMOS. Then, the detrimental effect of extended Si/SiO <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sub> interfaces along the silicon fingers in the MF-LDMOS has been widely investigated. Experimental results are analyzed and discussed on the basis of numerical simulations. The application of a time-dependent HCS degradation model is successfully proved for the first time on the conventional and MF-LDMOS devices at different stress biases and ambient temperatures.

Talk to us

Join us for a 30 min session where you can share your feedback and ask us any queries you have

Schedule a call

Disclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.