Abstract
Hot-carrier effects are thoroughly investigated in deep submicron N- and P-channel SOI MOSFETs, for gate lengths down to sub-0.1 /spl mu/m. Three main types of hot-carrier injections (maximum gate current, maximum substrate current and parasitic bipolar transistor action) are studied. A reliable lifetime prediction is proposed using accurate time-dependent laws for both N- and P-channel SOI MOSFETs.
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