Hot-carrier degradation behavior in body-contacted SOI nMOSFETs

Abstract

Hot-carrier degradation in body-contacted silicon-on-insulator (BC SOI) nMOSFETs has been investigated and compared to that in conventional partially-depleted SOI (PD SOI) and bulk nMOSFETs. As compared to PD SOI and bulk nMOSFETs, BC SOI nMOSFETs have a unique degradation-rate coefficient which increases with increasing stress voltage. This is due to the hole injection into gate oxide at the drain junction edge caused by parasitic BJT effect with increasing stress voltage. In this paper, we will present some experimental data and simulation results and discuss hot-carrier degradation mechanism in BC SOI nMOSFETs.