Abstract
Germanium-antimony-telluride or, particularly, Ge2Sb2Te5 (GST) thin films were deposited by hot-wire (HW) chemical vapor deposition (CVD). Tetraallylgermanium (TAGe), triisopropylantimony (TIPSb), and diisopropyltelluride (DIPTe) were used as precursors for germanium, antimony, and tellurium, respectively. The influence of deposition parameters such as a temperature, pressure, and hydrogen content was investigated. It was found that higher temperature, higher pressure, and lower hydrogen flow yielded higher growth rates of the films. An admixture of hydrogen reduced the Te concentration in the GST thin films and enhanced the content of Ge and Sb. The chemical composition could also be shifted by other deposition parameters but these dependences were not as well determined as in the hydrogen case. Generally, higher germanium concentration was related to smaller amount of tellurium. The films deposited at higher pressure showed significantly higher roughness. Additionally, the switching from low resistivity to high resistivity state was tested.
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