Abstract
Single crystal layers were grown on thoroughly etched semi-insulating GaAs(100) substrate at with hot wall epitaxy (HWE) system by evaporating source at . The crystalline structure of the single crystal thin films was investigated by the photoluminescence and double crystal X-ray diffraction (DCXD). The carrier density and mobility of single crystal thin films measured with Hall effect by van der Pauw method are , at 293 K, respectively. The temperature dependence of the energy band gap of the obtained from the absorption spectra was well described by the Varshni`s relation,
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