Hot-Pressed Sintered SiC-Based Composites for Microwave Absorbing Application

Abstract

In recent years, with the development of the stealthy and anti-stealthy system, the electromagnetic pollution increasing, microwave absorbing materials with thermal resistance and wide absorption band have been the one of the hotpots in functional materials. Silicon Carbon as a semiconductor material having unique mechanical properties and high temperature stability, is one of the preferred absorbing materials. In this paper, we used silicon carbide, barium titanate and barium ferrite as the raw materials, which belongs to the absorbing mechanisms of resistance loss, dielectric loss and magnetic loss, respectively. The composites were sintered by hot pressed sintering method, and characterizated by XRD, DTA-TG and SEM techniques. XRD results showed that Ba2TiSi2O8 was turn up in the sintering composite materials, and the SEM-EDS photograph was clearly observed that Ba2TiSi2O8 whisker were equally distributed on the surface of silicon carbide. we can assumed that the SiC matrix complex absorbers may be promising candidate for microwave absorption materials with strong-absorption, light-weight, wide-band properties.