Abstract
The CdTe/CdMnTe structures studied were grown by molecular beam epitaxy on (001) GaAs substrate covered with the ZnTe/CdZnTe (10/20 nm) superlattice and then with 3.5 μm thick CdTe buffer layer. The active part of the structure consisted of 60 periods of 4 nm wide CdTe (well)/13 nm wide CdMnTe (20% Mn fraction, barrier). The first 10 periods were undoped. The following 50 periods were δ-doped with indium to the level of 4 x 10 10 cm-2 either in the middle of the QW (sample #1), or in the middle of the barrier (sample #2) or both in the middle of the QW and the barrier (sample #3).
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